Cree, Inc. （Nasdaq: CREE）， announced today that it has achieved a major breakthrough in the development and wide scale commercialization of silicon carbide （SiC） technology with the demonstration of high quality, 150-mm SiC substrates with micropipe densities of less than 10/cm2. The current Cree standard for SiC substrates is 100-mm diameter material.
SiC is a high-performance semiconductor material used in the production of a broad range of lighting, power and communication components, including light-emitting diodes （LEDs）， power switching devices and RF power transistors for wireless communications. The significant size advancement of single crystal SiC substrates to 150-mm can enable cost reduction and increased throughput, while bolstering the continued growth of the SiC industry.
“Cree's achievement of 150-mm SiC substrates further demonstrates Cree's leadership in SiC materials technology,” said Dr. Vijay Balakrishna, Cree Materials product line manager. Steve Kelley, Cree chief operating officer, added, “We expect that 150-mm substrates can reduce device cost, boost manufacturing output and expand our product range